University of Cambridge > > Semiconductor Physics Group Seminars > THz Near-Field Nanoscopy: Improving Stability

THz Near-Field Nanoscopy: Improving Stability

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If you have a question about this talk, please contact Dr Kaveh Delfanazari.

Applications making use of the THz spectrum are growing, with increasing research and interest into the region. It is low energy (0.4 – 40 meV, 30 um-3 mm, 0.1-10 THz) and can be used for probing electronic excitations and rotational and vibrational modes in certain molecules. THz applications include spectroscopy, astronomy, communication and imaging. Near-field nanoscopy allows below the diffraction limit imaging (50 um at 3 THz) to investigate THz properties of samples sub 100 nm. This talk discusses results taken to date with our room temperature THz s-SNOM and the improvements that have been made to improve the stability and noise of the images, meaning it is now capable of imaging sub-20nm features topographically. So far it has only been possible to investigate samples at room temperature and the aim is to adapt current system to work cryogenically at 4.2 K, which will allow investigations of low dimensional quantum objects.

This talk is part of the Semiconductor Physics Group Seminars series.

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