University of Cambridge > > Optoelectronics Group > And we thought organic MIS devices were simple structures!

And we thought organic MIS devices were simple structures!

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If you have a question about this talk, please contact Dr. Z Chen.

The presentation will show how small-signal admittance measurements on organic MIS diodes can be used to extract important materials properties and device parameters. Starting from the small-signal response of an ideal MIS diode, the influence of additional processes such as insulator leakage will be considered and parasitic effects identified. Once these are identified and countered, and in the case of a p-type semiconductor such as P3HT , it then becomes possible to determine a density of states for traps at the insulator/semiconductor interface. The presentation will conclude with our recent work on resistive RAMs and photocapacitance measurements on MIS diodes.

This talk is part of the Optoelectronics Group series.

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