Excitation of acousto-electric vibrations in a GaAs lattice

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• Mr Shubeur Rahman, SP Group, Cavendish Laboratory
• Monday 20 February 2006, 14:15-15:15
• Mott Seminar Room, Cavendish Laboratory, Department of Physics.

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Preliminary results of a numerical study are presented, which show the excitation of electroacoustic modes of vibration in GaAs/AlGaAs heterostructure devices, due to abrupt changes of the voltages applied to surface gates, through piezoelectric coupling. The results are potentially significant for GaAs/AlGaAs quantum dot device applications which apply voltage pulses to the surface gates in order to perform coherent manipulation of electron charge or spin. The mechanism by which these vibrational modes may lead to decoherence in a charge-based quantum logic gate is briefly discussed.

This talk is part of the Semiconductor Physics series.

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