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A brief introduction to AlAs quantum wells

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I aim to present a basic introduction to AlAs/AlGaAs quantum wells, in which electrons can be confined to the indirect-band-gap material AlAs. In this way, without departing from the familiar and lattice-matched system of GaAs/AlGaAs/AlAs, we can produce a 2DEG in which the electrons have different parameters from those in the conventional GaAs/AlGaAs 2DEG. Within the group, we have developed the capability to grow AlAs quantum wells with electron mobilities that approach the best reported to date. I will show some of the results of electrical characterization of our wells, and address some of the technological issues related to their growth, fabrication, and measurement.

This talk is part of the Semiconductor Physics series.

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