University of Cambridge > > Semiconductor Physics Group Seminars > Molecular Beam Epitaxy in the Semiconductor Physics Group (SP Workshop)

Molecular Beam Epitaxy in the Semiconductor Physics Group (SP Workshop)

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If you have a question about this talk, please contact Teri Bartlett.

Molecular Beam Epitaxy (MBE) is a growth technique capable of providing the highest achievable purity films in semiconductor sample growth.

In this workshop, a brief introduction to the MBE growth process and technology will be presented. This will be expanded to describe the growth systems/capability the group currently has, as well as giving a historical overview. Information on a ‘typical’ growth campaign and the process of requesting new wafers will be given, as well as useful instruction on gaining the most information from the data stored on the group’s MBE database.

While the talk will be aimed at the new arrivals to the group, all SP members should find it of use - especially with an update on the group’s growth capability and new growth members.

This talk is part of the Semiconductor Physics Group Seminars series.

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