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Scott Lecture II: Making of Sustainable Smart Society by Transformative Electronics 2 - Future Electronics

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Abstract: The applications of GaN and related materials are not limited to blue LEDs. They can be used for deep-UV (DUV) LEDs by utilizing Al-containing AlGaN. According to a UNICEF report, 663 million people still cannot drink safe water and 2.4 billion people do not use safe sanitation facilities. AlGaN-based DUV LE Ds are effective for the low-cost and simple sterilization of water. This material system is also useful for electric power devices. In mobile or smart phone base stations, high-frequency RF amplifiers employing GaAs-based heterojunction field-effect transistors (HFETs) are being replaced with those employing GaN-based HFE Ts because of their capability of higher-power operation. By replacing Si-based insulated gate bipolar transistors and super-junction MOSFET power devices with GaN-based power devices in inverter and converter circuits, we can expect a 9.8% reduction in electricity consumption in Japan. In this presentation, I would like to discuss a new project on GaN-based power devices that is being financially supported by the Ministry of Education, Culture, Sports, Science and Technology of Japan. I also would like to explain one of the new applications of GaN and related materials as photocathodes for high-efficiency and long-life electron emitters. This project is being conducted at the startup company PeS in Nagoya University. Clear video filming of a moving object by transmission electron microscopy using a 5 ms pulsed electron beam was successfully achieved by this startup company.

This talk is part of the Scott Lectures series.

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