Using scanning probes to fabricate and characterise nanoscale donor devices in silicon
- π€ Speaker: Neil Curson, Centre for the Advanced Characterisation of Materials, University College London
- π Date & Time: Thursday 28 February 2019, 16:00 - 17:00
- π Venue: Mott Seminar Room, Cavendish Laboratory
Abstract
Atomic and nano-scale structures consisting of dopants buried in silicon can be used to make novel quantum devices. The process of fabricating buried donor structures using scanning tunnelling microscope-based lithography, combined with precursor gas adsorption and molecular beam epitaxy will be described. In addition, the electrical and optical characterisation of such structures using other techniques will be discussed, in particular revealing new physics about the interaction of the orbital dopant states with their local environment.
Series This talk is part of the Physics and Chemistry of Solids Group series.
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Neil Curson, Centre for the Advanced Characterisation of Materials, University College London
Thursday 28 February 2019, 16:00-17:00