Abstract

Thermoradiative power generation is achieved through the emission of light from a warm ambient into a cold surroundings representing a thermodynamically symmetric counterpart to photovoltaic solar power generation. The thermoradiative diode provides a semiconductor implementation of this process whereby radiative emission from a warm diode into a cold environment expels more entropy than supplied by the flow of heat to the diode hence permitting work to be performed. Under these conditions a reverse bias spontaneously forms across the diode allowing an electrical current to flow thereby delivering electrical power. We report the full IV characteristics from a 0.3eV HgCdTe diode was held at 20.5C and exposed to a radiant surface of different temperatures. Thermoradiative power is generated when the diode faces a cold (

https://pubs.acs.org/doi/abs/10.1021/acsphotonics.2c00223