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Induced stress due to focused ion beam milling and minimum feature sizes

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If you have a question about this talk, please contact Dr Jonathan Barnard .

Focused ion beam (FIB) systems are routinely used to prepared samples for physical and chemical analysis and micro and nanomachining. Unfortunately, FIB imaging and sputtering may create stress within a material which can adversely affect a devices performance or a machined structure. The first part of the talk discusses measurements to determine the magnitude of the induced stress in silicon as a function of dose. The second part of the talk discusses focused ion beam micro and nanofabrication methods to produce sub 5 nm structures and the factors that dictate the minimum feature sizes.

This talk is part of the Electron Microscopy Group Seminars series.

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