Abstract

The selective dispersion of semiconducting carbon nanotubes (s-SWNT) by wrapping with conjugated polymers has enabled their application in electronic and optoelectronic devices such as field-effect transistors and light-emitting field-effect transistors. Here, we show that the dispersion process can be easily scaled-up while maintaining good photoluminescence yield (~2%) and nanotube length (>1 µm) to obtain concentrated dispersions and ultimately thin ( 100 nm) of s-SWNT with excellent optical and electrical properties. We demonstrate ambipolar charge transport with high mobilities and near-infrared light-emission in field-effect transistors based on monochiral and mixed networks of s-SWNT. The variation of networks allow us to investigate the influence of the nanotube diameter distribution on charge transport within the network depending on the applied gate voltages and thus charge carrier density. Voltage-dependent photoluminescence and electroluminescence spectra provide insight into the charge carrier distribution among the different nanotubes. Furthermore, monochiral s-SWNT films are interesting materials for strong light-matter interaction due to their small Stokes shift and large exciton binding energy, which allows us to demonstrate exciton-polariton formation in suitable cavities and emission enhancement in plasmonic feedback structures.