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Spin precession control and the Aharonov-Casher effect

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In this talk I will present some of the results from my work at NTT Basic Research Labs in Japan. We investigated interference effects due to spin precession in InGaAs/InAlAs heterostructures. In our heterostructures, a 10 nm InGaAs quantum well served as a two-dimensional electron gas with spin-orbit interaction (SOI). We etched arrays of narrow rings, 1-2 micrometres in diameter, in the 2DEG and covered the rings with an insulating layer and a gate. As a consequence of the SOI , the electron spins precessed as they travelled around the rings and we could control the precession rate by applying a voltage to the gate. We detected interference which was due to the spin precession by analysing the Al’tshuler-Aronov-Spivak interference at different gate voltages. This interference is known as the Aharonov-Casher effect.

This talk is part of the Semiconductor Physics series.

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