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SUMMARY:Road to ultra-low switching energy Memories for artificial neurons
  - Professor Thirumalai Venkatesan
DTSTART:20181105T143000Z
DTEND:20181105T153000Z
UID:TALK114562@talks.cam.ac.uk
CONTACT:Emrys Evans
DESCRIPTION:Memory devices are responsible for a significant fraction of t
 he energy consumed in electronic systems- typically 25% in a laptop and 50
 % in a server station. Reducing the energy consumption of memories is an i
 mportant goal. For the evolving field of artificial intelligence the compa
 tible devices must simulate a neuron. We are working on three different ap
 proaches towards these problems- one involving an organic metal centred az
 o complex\, the other involving oxide based ferroelectric tunnel junctions
  and the last involving real live neuronal circuits. \n\nIn the organic me
 mristors that we have built on oxide surfaces the device performance excee
 ds the ITRS roadmap specification significantly demonstrating the viabilit
 y of this system for practical applications. More than that these organic 
 memories exhibit multiple states arising from interplay of redox states an
 d counter ion location studied by in-situ Raman and UV-Vis measurements le
 ading to the possibility of neuronal systems. This organic family of molec
 ules systems is extremely stable and reproducible- a significant departure
  from conventional organic electronics. On the oxide front the significant
  results are that ferroelectricity is seen even in two atomic layers of Ba
 TiO3 or BiFeO3. Oxygen vacancy motion can also play an important role in c
 hanging the device characteristics leading to synaptic characteristics. La
 st but not the least\, oxide surfaces can be utilized to force neurons to 
 grow at specific places on a surface giving the potential for fabricating 
 live neuronal circuits.
LOCATION:Kapitza Seminar Room\, Kapitza\, Cavendish laboratory
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