BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Talks.cam//talks.cam.ac.uk//
X-WR-CALNAME:Talks.cam
BEGIN:VEVENT
SUMMARY:Layered Materials: Crystal Growth For Future Device Structures - P
 rof. Luigi Colombo\, (University of Texas at Dallas\, USA)
DTSTART:20190111T160000Z
DTEND:20190111T170000Z
UID:TALK122179@talks.cam.ac.uk
CONTACT:Dr Anna Ott
DESCRIPTION:The isolation of graphene has given rise to the revitalization
  of an old full set of materials\, layered materials (LMs)\, with unique e
 lectrical\, chemical and physical properties. Some of the materials under 
 investigation in addition to graphene are hexagonal boron nitride (h-BN)\,
  semiconducting\, metallic\, and superconducting\, transition metal dichal
 cogenides (TMD) with a general chemical formula\, MX2 where M is for examp
 le equal to Mo\, W\, Ta\, Nb\, Zr\, Ti\, and X = S\, Se and Te\, and other
 s. While graphene is a material with many exceptional properties and h-BN 
 is an excellent insulator\, TMDs provide what neither graphene nor h-BN ca
 n\, bandgap engineering that\, in principle\, can be used to create new de
 vices that cannot be fabricated with h-BN and graphene alone. There is hop
 e that LMs can be integrated to fabricate numerous device types for many a
 pplications ranging from inkjet-printed circuits\, photonic applications\,
  flexible electronics\, and high performance electronics. However\, in ord
 er to fully realize the benefits of these materials\, the community will h
 ave to work together to define the device structures\, device integration 
 schemes\, and materials growth processes and requirements\, together with 
 production equipment. A number of deposition techniques have been used to 
 prepare large area graphene\, such as growth on SiC through the evaporatio
 n of Si at high temperatures\, precipitation of carbon from metals\, and c
 hemical vapor deposition on Cu. Direct growth of good quality graphene on 
 dielectrics/semiconductors other than SiC with reasonable properties has o
 nly been reported recently on Ge. The preparation of large area h-BN is al
 so in great demand and processes are being developed to achieve this on bo
 th metals and dielectrics. TMDs present altogether different opportunities
  and difficulties in the preparation of low defect density large area sing
 le crystals.  Vapor transport\, chemical vapor deposition (CVD)\, and mole
 cular beam epitaxy (MBE) are being developed to produce these materials fo
 r initial studies of materials physics and device fabrication. A number of
  devices structures are currently under evaluation to take advantage of th
 e basic properties of graphene\, h-BN and TMDs. Some of the devices are ba
 sed on tunneling phenomena while others are based on excitonic phenomena. 
 I will present state-of-the-art results on graphene\, h-BN\, and TMDs\, an
 d their prospects for device applications.
LOCATION:Cambridge Graphene Centre Seminar Room
END:VEVENT
END:VCALENDAR