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SUMMARY:Spin Injection into Germanium- Chen Shen - Chen Shen (TFM)
DTSTART:20111027T133000Z
DTEND:20111027T143000Z
UID:TALK33981@talks.cam.ac.uk
CONTACT:Kimberly Cole
DESCRIPTION:In this study\, we generate spin polarised electrons in GaAs n
 ear an epitaxial Fe/GaAs interface using optical spin orientation. By appl
 ying high forward bias\, we remove or invert the Schottky barrier. A spin 
 filtering current was obtained as a function of bias for opposite magnetic
  fields. The results reveal a clear spin filtering in the absence of a tun
 nelling barrier and suggest a successful experimental demonstration of bal
 listic spin transport across an epitaxial Fe/GaAs interface. Using a simpl
 e transport model based on a transfer matrix approach within an effective 
 mass approximation\, we semi-quantitatively obtain the polarisation of the
  interfacial density of states by fitting our experimental data. By compar
 ing with the theoretical results based on a tight-binding approach by Hond
 a* et al.*[1]\, our experimental results suggest the interface is a mixtur
 e of Fe-As and Fe-Ga terminated structure.
LOCATION:Mott Seminar Room\, Cavendish Laboratory
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