BEGIN:VCALENDAR
VERSION:2.0
PRODID:-//Talks.cam//talks.cam.ac.uk//
X-WR-CALNAME:Talks.cam
BEGIN:VEVENT
SUMMARY:Overview of two-dimensional electron gases based on the LaAlO3/SrT
 iO3 interface- Dr Thomas Fix -Device Materials Group - Speaker to be confi
 rmed
DTSTART:20120524T131500Z
DTEND:20120524T150000Z
UID:TALK38360@talks.cam.ac.uk
CONTACT:Kimberly Cole
DESCRIPTION:T. Fix\, F. Schoofs\, J. L. MacManus-Driscoll and M. G. Blamir
 e. \nDepartment of Materials Science\, University of Cambridge\, Cambridge
 \, United Kingdom\nThe origin of the free charge layer which forms at the 
 LaAlO3/SrTiO3 interface [1] is still uncertain. Still the impact of defect
 s on the conduction properties can provide useful information to understan
 d this system. The defects that we will consider here can be induced by th
 e substrate steps\, by the deposition parameters\, or can be voluntarily i
 ntroduced in the form of dopants. By varying the dopant distance from the 
 interface\, the doping concentration and the nature of the dopant in SrTiO
 3 at the LaAlO3/SrTiO3 interface we show the extreme sensitivity of the sy
 stem and confirm that the underlying phenomenon accounting for the conduct
 ion is most likely an electronic reconstruction\, with the majority of the
  carriers confined within 1 unit cell of the interface [2\,3]. This talk w
 ill give an overview of all the work on LaAlO3/SrTiO3 in our group. \n[1] 
 Ohtomo A.\, Hwang\, H. Y.\, Nature 427\, 423 (2004).\n[2] T. Fix\, J.L. Ma
 cManus-Driscoll\, M.G. Blamire\, Appl. Phys. Lett. 94\, 172101 (2009).\n[3
 ] T. Fix\, F. Schoofs\, J.L. MacManus-Driscoll\, and M.G. Blamire\, Phys. 
 Rev. Lett. 103\, 166802 (2009).\n
LOCATION:Mott Seminar Room\, Cavendish Laboratory
END:VEVENT
END:VCALENDAR