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SUMMARY:Spin gating electrical currents- Dr. Chiara Ciccareli\, ME Group -
  Dr. Chiara Ciccareli\, ME Group
DTSTART:20121213T143000Z
DTEND:20121213T160000Z
UID:TALK41220@talks.cam.ac.uk
CONTACT:Kimberly Cole
DESCRIPTION:In spin-orbit coupled magnetic materials the chemical potentia
 l depends on the orientation of the magnetisation. By making the gate of a
  field effect transistor magnetic\, it is possible to tune the channel con
 ductance not only electrically but also magnetically. Here\, we demonstrat
 e the spin-gating effect for an aluminium single electron transistor (SET)
  gated by GaMnAs. The conductance variation of the SET provides a direct p
 robe of the magnetisation dependent change in the chemical potential of th
 e magnetic gate with μeV resolution. In performing magnetic field sweeps
  in fixed directions we also observe the non-linearity of the chemical pot
 ential in GaMnAs. The control of a transistor conductance by the gate magn
 etisation demonstrates a new approach for constructing spin\ntransistors: 
 instead of spin-transport controlled by ordinary gates we spin-gate ordina
 ry charge transport.
LOCATION:Mott Seminar Room\, Cavendish Laboratory
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