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SUMMARY:Developing semiconductor nanowires for future  optoelectronics - D
 r. Hannah Joyce (University of Cambridge)
DTSTART:20141111T143000Z
DTEND:20141111T153000Z
UID:TALK56170@talks.cam.ac.uk
CONTACT:Dr. Stavros Athanasopoulos
DESCRIPTION:Semiconductor nanowires exhibit outstanding potential as nano-
 building blocks for the next generation of electronic devices. Amongst sem
 iconductor nanowires\, III–V nanowires\, such as GaAs and InP nanowires\
 , are particularly promising for optoelectronic devices\, ranging from sol
 ar cells to integrated photonic circuits. Arguably the most promising III
 –V nanowire fabrication technique is metalorganic chemical vapour deposi
 tion\, using Au nanoparticles to direct anisotropic nanowire growth. This 
 fabrication process enables the growth of novel axial and radial (core–s
 hell) heterostructures\, and such heterostructures will underpin future na
 nowire-based devices. \nIn addition to the ability to fabricate nanowires 
 with high precision\, a detailed understanding of the electronic propertie
 s of nanowires is imperative for the development of novel nanowire-based d
 evices. As a contact-free method of assessing ultrafast carrier dynamics a
 nd transport\, terahertz conductivity spectroscopy is ideally suited for e
 lectrical characterisation of nanowires. My talk will discuss the growth o
 f novel and complex III–V nanowires\, and how terahertz conductivity spe
 ctroscopy has revealed the fascinating properties of these nanowires.\n
LOCATION:Kapitza Building Seminar Room\, Cavendish Laboratory\, Department
  of Physics
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