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SUMMARY:Research on InP-based SWIR optoelectronic materials and devices - 
 Dr Yi Gu\, Shanghai Institute of Microsystem and Information Technology\, 
 Chinese Academy of Science
DTSTART:20160210T141500Z
DTEND:20160210T151500Z
UID:TALK64314@talks.cam.ac.uk
CONTACT:Teri Bartlett
DESCRIPTION:Dr. Yi Gu will give an overview of the recent work on InP-base
 d optoelectronic materials and devices carried out at the Shanghai Institu
 te of Microsystem and Information Technology (SIMIT)\, part of the Chinese
  Academy of Sciences. This work includes InGaAs detectors\, InGaAs(P) Aval
 anche Photodiodes (APDs)\, InP-based type-I Quantum Well (QW) lasers for e
 mission at wavelengths  beyond 2 µm and also bismuth-related materials an
 d devices.\n\nDr. Gu earned his Ph. D. from SIMIT in 2009 and is currently
  an Associate Professor at the same institution. His research  interests a
 re the Molecular Beam Epitaxy (MBE) and the demonstration of III-V optoele
 ctronic materials and devices. He has published more than 80 papers on pee
 r-reviewed journals and four book chapters and has been visiting the Unive
 rsity of Sheffield since September 2015\, working on APD characterization 
 and Bismide growth.\n
LOCATION:Mott Seminar Room (Mott Building Room 531)\, Cavendish Laboratory
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