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SUMMARY:Scott Lecture II: Making of Sustainable Smart Society by Transform
 ative Electronics 2 - Future Electronics  - Prof Hiroshi Amano\, Nagoya Un
 iversity
DTSTART:20170517T150000Z
DTEND:20170517T160000Z
UID:TALK72536@talks.cam.ac.uk
CONTACT:Leona Hope-Coles
DESCRIPTION:Abstract: The applications of GaN and related materials are no
 t limited to blue LEDs. They can be used for deep-UV (DUV) LEDs by utilizi
 ng Al-containing AlGaN. According to a UNICEF report\, 663 million people 
 still cannot drink safe water and 2.4 billion people do not use safe sanit
 ation facilities. AlGaN-based DUV LEDs are effective for the low-cost and 
 simple sterilization of water.  This material system is also useful for el
 ectric power devices. In mobile or smart phone base stations\, high-freque
 ncy RF amplifiers employing GaAs-based heterojunction field-effect transis
 tors (HFETs) are being replaced with those employing GaN-based HFETs becau
 se of their capability of higher-power operation. By replacing Si-based in
 sulated gate bipolar transistors and super-junction MOSFET power devices w
 ith GaN-based power devices in inverter and converter circuits\, we can ex
 pect a 9.8% reduction in electricity consumption in Japan. In this present
 ation\, I would like to discuss a new project on GaN-based power devices t
 hat is being financially supported by the Ministry of Education\, Culture\
 , Sports\, Science and Technology of Japan. I also would like to explain o
 ne of the new applications of GaN and related materials as photocathodes f
 or high-efficiency and long-life electron emitters. This project is being 
 conducted at the startup company PeS in Nagoya University. Clear video fil
 ming of a moving object by transmission electron microscopy using a 5 ms p
 ulsed electron beam was successfully achieved by this startup company.  
LOCATION:Pippard Lecture Theatre\, Cavendish Laboratory\, Department of Ph
 ysics
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